infrared emitting diode, rohs compliant, 950 nm, gaas www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81055 280 rev. 2.1, 05-sep-08 TSUS5200, tsus5201, tsus5202 vishay semiconductors description TSUS5200 is an infrared, 950 nm emitting diode in gaas technology molded in a blue-gray tinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: p = 950 nm ? high reliability ? angle of half intensity: ? = 15 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? infrared remote control an d free air transmission systems with low forward voltage and small package requirements ? emitter in transmissive sensors ? emitter in reflective sensors note test conditions see tabl e ?basic char acteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSUS5200 20 15 950 800 tsus5201 25 15 950 800 tsus5202 30 15 950 800 ordering information ordering code packaging remarks package form TSUS5200 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsus5201 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsus5202 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 150 ma peak forward current t p /t = 0.5, t p = 100 s i fm 300 ma surge forward current t p = 100 s i fsm 2.5 a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 230 k/w www..net
document number: 81055 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 2.1, 05-sep-08 281 TSUS5200, tsus5201, tsus5202 infrared emitting diode, rohs compliant, 950 nm, gaas vishay semiconductors fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward cu rrent limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21313 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21314 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v temperature coefficient of v f i f = 100 ma tk vf - 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf temperature coefficient of e i f = 20 ma tk e - 0.8 %/k angle of half intensity ? 15 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1.5 a t r 400 ns fall time i f = 100 ma t f 800 ns i f = 1.5 a t f 400 ns virtual source diameter d 3.8 mm www..net
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81055 282 rev. 2.1, 05-sep-08 TSUS5200, tsus5201, tsus5202 vishay semiconductors infrared emitting diode, rohs compliant, 950 nm, gaas note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current type dedicated characteristics parameter test condition part symbol min. typ. max. unit forward voltage i f = 1.5 a, t p = 100 s TSUS5200 v f 2.2 3.4 v tsus5201 v f 2.2 3.4 v tsus5202 v f 2.2 2.7 v radiant intensity i f = 100 ma, t p = 20 ms TSUS5200 i e 10 20 50 mw/sr tsus5201 i e 15 25 50 mw/sr tsus5202 i e 20 30 50 mw/sr i f = 1.5 a, t p = 100 s TSUS5200 i e 95 180 mw/sr tsus5201 i e 120 230 mw/sr tsus5202 i e 170 280 mw/sr radiant power i f = 100 ma, t p = 20 ms TSUS5200 e 13 mw tsus5201 e 14 mw tsus5202 e 15 mw t p - p u lse d u ration (ms) 94 79 8 9 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i- for w ard c u rrent (a) f t p /t = 0.01 i fsm = 2.5 a ( single p u lse ) 0.05 0.1 0.5 1.0 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i- for w ard c u rrent (ma) f 4 3 2 1 0 v f - for w ard v oltage ( v ) 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 7991 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i - radiant intensity (m w /sr) e TSUS5200 tsus 5202 tsus 5201 www..net
document number: 81055 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 2.1, 05-sep-08 283 TSUS5200, tsus5201, tsus5202 infrared emitting diode, rohs compliant, 950 nm, gaas vishay semiconductors fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intensity/power vs. ambient temperature fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement package dimensions in millimeters - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 7992 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 TSUS5200 tsus 5202 - 10 10 50 0 100 0 0.4 0. 8 1.2 1 . 6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c) 900 950 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 1000 94 7994 e rel - relati v e radiant po w er i f = 100 ma 0.4 0.2 0 0.2 0.4 i - relati v e radiant intensity e rel 0.6 94 7995 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 (4.7) 12.5 0.3 a c 35.5 0.55 < 0.7 1.2 + 0.2 - 0.1 0.5 + 0.15 - 0.05 5 0.15 2.54 nom. 0.5 + 0.15 - 0.05 5. 8 0.15 8 .7 0.3 7.7 0.15 1.5 0.25 area n ot pla n e r 2.49 (sphere) 6.544-525 8 .02-4 iss u e: 5; 03.0 8 .9 8 95 10916 technical dra w ings according to di n specification www..net
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www..net
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